The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 1984
Filed:
Apr. 20, 1982
Applicant:
Inventors:
Sadayuki Okudaira, Kokubunji, JP;
Hiroji Saida, Kokubunji, JP;
Yoshio Sakai, Hachioji, JP;
Shigeru Nishimatsu, Kokubunji, JP;
Keizo Suzuki, Hachioji, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156657 ; 156662 ; 2041 / ;
Abstract
A plurality of silicon regions different in impurity concentration from each other are simultaneously subjected to dry etching in such a manner that neutral particles in a plasma do not substantially participate in etching and therefore etching is performed substantially by ions. Thus, the silicon regions different in impurity concentration from each other can be etched at substantially the same etching rate, independently of impurity concentration.