The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 1980
Filed:
Feb. 05, 1979
Applicant:
Inventors:
Thomas A Hansen, Poughkeepsie, NY (US);
Claude Johnson, Jr, Yorktown Heights, NY (US);
Robert R Wilbarg, Hopewell Junction, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 136261 ; 148187 ; 156643 ; 156646 ; 156647 ; 156662 ; 2041 / ;
Abstract
A differential reactive ion etching process significantly reduces the reflectivity of silicon. The process takes place in a reactive ion etching tool, typically a diode-configured system employing ambient gases which react with the silicon.