The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Jun. 14, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Li-Ling Su, Hsinchu, TW;
Ming-Hsien Lin, Hsinchu, TW;
Hsin-Ping Chen, Hsinchu, TW;
Shao-Kuan Lee, Hsinchu, TW;
Cheng-Chin Lee, Hsinchu, TW;
Yen-Ju Wu, Hsinchu, TW;
Hsin-Yen Huang, Hsinchu, TW;
Hsi-Wen Tien, Hsinchu, TW;
Chih-Wei Lu, Hsinchu, TW;
Chia-Chen Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate, a heat dissipation dielectric layer, a conductive interconnect structure, and a blocking dielectric layer. The heat dissipation dielectric layer is disposed on the substrate and has a thermal conductivity greater than 10 W/mK. The conductive interconnect structure is disposed in the heat dissipation dielectric layer. The blocking dielectric layer is disposed in the heat dissipation dielectric layer to isolate the conductive interconnect structure from the heat dissipation dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile