The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

Dec. 07, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Min Gyu Sung, Latham, NY (US);

Rishikesh Krishnan, Cohoes, NY (US);

Nicolas Jean Loubet, Guilderland, NY (US);

Julien Frougier, Albany, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Tao Li, Slingerlands, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10W 10/00 (2026.01); H10D 84/83 (2025.01); H10W 10/17 (2026.01);
U.S. Cl.
CPC ...
H10W 10/014 (2026.01); H10D 84/83 (2025.01); H10D 84/834 (2025.01); H10W 10/17 (2026.01);
Abstract

A semiconductor structure is provided that has a lowered gate aspect ratio on the shallow trench isolation area to prevent gate structure flop over. The structure includes a shallow trench isolation region including a first trench dielectric material having a first height. The structure further includes an active device region located adjacent to the shallow trench isolation region. The active device region includes a second trench dielectric material having a second height which is less than the first height.


Find Patent Forward Citations

Quick Actions:

Sung, Min. (2026). Lowering gate aspect ratio on sti region (U.S. Patent No. 12796415). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12796415

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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