The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

Oct. 30, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Tsung-Sheng Kang, Ballston Lake, NY (US);

Tao Li, Slingerlands, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Jingyun Zhang, Albany, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/116 (2025.01); H10D 62/151 (2025.01); H10D 64/017 (2025.01); H10D 84/013 (2025.01); H10D 84/0149 (2025.01); H10D 84/0151 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01);
Abstract

The embodiments of the present disclosure recognize the potential benefits of semiconductor IC device fabrication techniques to form a microdevice, such as a transistor, that includes structures, such as a source and/or drain, that are to be connected to a backside contact that is further associated with a backside back end of line (BEOL) network. The semiconductor IC device includes a bottom isolation extension (BIE) region. The BIE region is formed within a gate structure of the microdevice and may be located between the backside contact and the gate structure. The BIE region may provide for increased electrical isolation between the backside contact and the gate structure.


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Quick Actions:

Kang, Tsung-Sheng. (2026). Bottom isolation extension region (U.S. Patent No. 12796027). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12796027

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