The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Jun. 23, 2023
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Dewei Xu, Clifton Park, NY (US);

Ravi Prakash Srivastava, Clifton Park, NY (US);

Zhuojie Wu, Port Chester, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. INC., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/20 (2026.01); H10W 20/00 (2026.01); H10W 20/46 (2026.01); H10W 20/48 (2026.01);
U.S. Cl.
CPC ...
H10W 20/20 (2026.01); H10W 20/023 (2026.01); H10W 20/072 (2026.01); H10W 20/46 (2026.01); H10W 20/48 (2026.01);
Abstract

A structure includes a through semiconductor via (TSV) in a semiconductor substrate. The structure also includes a cavity including a first cavity portion in the semiconductor substrate and surrounding a middle section of the TSV and in direct contact with the TSV. The cavity also includes a plurality of second cavity portions in the semiconductor substrate and surrounding an upper section of the TSV. The semiconductor substrate is between adjacent second cavity portions, creating a bridge portion that provides structural support. The cavity reduces parasitic capacitance.


Find Patent Forward Citations

Quick Actions:

Xu, Dewei. (2026). Structure with cavity around through semiconductor via (U.S. Patent No. 12787741). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787741

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