The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Jun. 23, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chih-Kuan Yu, Zhushan Township, TW;
Shen-Hui Hong, Tainan City, TW;
Feng-Chi Hung, Chu-Bei City, TW;
Wen-I Hsu, Tainan City, TW;
Jen-Cheng Liu, Hsin-Chu City, TW;
Dun-Nian Yaung, Taipei City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure relates to semiconductor device with a multi-gate structure. The semiconductor device includes a substrate and a doped region disposed within the substrate. A gate electrode is disposed over the doped region, and a source region and a drain region are disposed within the doped region. A shallow trench isolation (STI) structure is disposed within the substrate and laterally surrounds the source region and the drain region. A first doped liner is disposed along the STI structure, where the first doped liner separates the STI structure from the source region and the drain region. A second doped liner is disposed along the STI structure, where the second doped liner is separated from the first doped liner by the STI structure above a bottom surface of the STI structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile