The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
Nov. 21, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Sheng-An Kuo, Hsinchu, TW;
Eva Wang, Kaohsiung City, TW;
Shi-Dong Hong, Hsinchu City, TW;
Chen-Sheng Lin, Taoyuan City, TW;
Chao-Wen Shih, Hsinchu County, TW;
Kuo-Chiang Ting, Hsinchu City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A first wafer having a first portion closer to a first surface and a thicker second portion connected with the first portion and closer to the second surface opposite to the first surface is provided. A second wafer is provided to bond with the first wafer. An edge trimming process is performed to form a trench penetrating through the second wafer and extending beyond the first portion and extending into the second portion. After bonding dies to the second wafer, a filling material is formed over the dies and the first and second wafers, wrapping around and between the dies, covering the first and second wafers, and partially filling the trench. A wafer thinning process is performed to remove the second portion and partially remove the filling material in the trench to level the surface of the thinned first wafer with the surface of the thinned filling material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile