The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
Jul. 14, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Te-Chih Hsiung, Taipei City, TW;
Yi-Chun Chang, Hsinchu City, TW;
Yi-Chen Wang, Hsinchu County, TW;
Yuan-Tien Tu, Chiayi County, TW;
Huan-Just Lin, Hsinchu City, TW;
Jyun-De Wu, New Taipei City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A device comprises a source/drain contact over a source/drain region of a transistor, an etch stop layer above the source/drain contact, an interlayer dielectric (ILD) layer above the etch stop layer, and a source/drain via extending through the ILD layer and the etch stop layer to the source/drain contact. The etch stop layer has an oxidized region in contact with the source/drain via and separated from the source/drain contact.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile