The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Jun. 09, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ping-Hsun Lin, New Taipei City, TW;

Hung-Yi Tsai, Hsinchu County, TW;

Hao-Ping Cheng, Taichung City, TW;

Ta-Cheng Lien, Hsinchu County, TW;

Hsin-Chang Lee, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/70 (2012.01); H10P 50/00 (2026.01); H10P 50/26 (2026.01); H10P 74/00 (2026.01); H10P 76/40 (2026.01);
U.S. Cl.
CPC ...
H10P 76/4085 (2026.01); H10P 50/266 (2026.01); H10P 50/71 (2026.01); H10P 74/23 (2026.01);
Abstract

A method for fabricating a mask is provided. The method includes depositing a target layer over a dielectric substrate; forming a patterned photoresist layer over the target layer according to an integrated circuit (IC) layout; determining a plurality of dry etch control parameters according a material of the target layer and an information of the IC layout; and using a dry etcher set up with the dry etch control parameters, etching the target layer through the patterned photoresist layer.


Find Patent Forward Citations

Quick Actions:

Lin, Ping-Hsun. (2026). Method for fabricating mask (U.S. Patent No. 12772809). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772809

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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