Dielectric structure for small pixel designs

Abstract

Various embodiments of the present disclosure are directed towards an image sensor. The image sensor comprise a substrate having a first region and a second region. A first gate overlies the first region. A second gate overlies the second region. A deep trench isolation (DTI) structure is in the substrate and laterally between the first region and the second region. A first floating diffusion node is in the first region. A second floating diffusion node is in the second region. An interlayer dielectric (ILD) structure is over the substrate. A dielectric structure is between the ILD structure and the substrate. The dielectric structure is laterally between the first and second floating diffusion nodes. The dielectric structure is laterally spaced from the first and second gates. The dielectric structure overlies the DTI structure. A width of the dielectric structure is greater than a width of the DTI structure.