The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Sep. 20, 2022
Intel Corporation, Santa Clara, CA (US);
Mahdi Mohammadighaleni, Phoenix, AZ (US);
Benjamin Duong, Phoenix, AZ (US);
Shayan Kaviani, Phoenix, AZ (US);
Joshua Stacey, Chandler, AZ (US);
Miranda Ngan, Chandler, AZ (US);
Dilan Seneviratne, Chandler, AZ (US);
Thomas Heaton, Mesa, AZ (US);
Srinivas Venkata Ramanuja Pietambaram, Chandler, AZ (US);
Whitney Bryks, Chandler, AZ (US);
Jieying Kong, Chandler, AZ (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
An apparatus, system, and method for in-situ three-dimensional (3D) thin-film capacitor (TFC) are provided. A 3D TFC can include a glass core, a through glass via (TGV) in the glass core including first conductive material, the first conductive material forming a first electrode of the 3D MIM capacitor, a second conductive material acting as a second electrode of the 3D MIM capacitor, and a dielectric material in contact with the first and second conductive materials, the dielectric material extending vertically and horizontally and physically separating the first and second conductive materials.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile