The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Jun. 15, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

An-Ren Zi, Hsinchu, TW;

Yen-Yu Kuo, Hsinchu, TW;

Ching-Yu Chang, Hsinchu, TW;

Chin-Hsiang Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/075 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0042 (2013.01); G03F 7/0755 (2013.01); G03F 7/167 (2013.01); G03F 7/2004 (2013.01); G03F 7/325 (2013.01); G03F 7/38 (2013.01);
Abstract

A method for forming a semiconductor device is provided. The method includes forming a photoresist layer comprising an organometallic compound over a substrate. The organometallic compound includes a metal core, at least one hydrolyzable ligand bonded to the metal core, and at least one photoacid generator ligand bonded to the metal core. The method further includes selectively exposing the photoresist layer to radiation and developing the photoresist layer to form a pattern in the photoresist layer.


Find Patent Forward Citations

Zi, An-Ren. (2026). Photo ligand design for euv or e-beam metallic photoresists (U.S. Patent No. 12769204). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12769204

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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