The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Feb. 06, 2023
United Microelectronics Corp., Hsinchu, TW;
Chih Hsiang Chang, Tainan City, TW;
Mei-Ling Chao, Tainan City, TW;
Yin-Chia Tsai, Tainan City, TW;
Tien-Hao Tang, Hsinchu City, TW;
Kuan-Cheng Su, Taipei, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
An electrostatic discharge device including a gate structure, a plurality of first doped regions, and a plurality of second doped regions. The gate structure is disposed on a substrate. The gate structure includes a body part and a plurality of extension parts. The extension parts are connected with the body part, and an extension direction of the body part is different from an extension direction of the extension parts. The first doped regions are located in the substrate between the extension parts. The second doped regions are located in the substrate at two outer sides of the extension parts. The first doped regions and the second doped regions have different conductivity types.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile