The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Sep. 05, 2023
Applicant:

Adeia Semiconductor Bonding Technologies Inc., San Jose, CA (US);

Inventors:

Dominik Suwito, San Jose, CA (US);

Thomas Workman, San Jose, CA (US);

Rajesh Katkar, Milpitas, CA (US);

Laura Wills Mirkarimi, Sunol, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 99/00 (2026.01); H10W 72/00 (2026.01); H10W 72/90 (2026.01); H10W 80/00 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10W 99/00 (2026.01); H10W 72/90 (2026.01); H10W 72/019 (2026.01); H10W 80/312 (2026.01); H10W 80/327 (2026.01); H10W 90/792 (2026.01);
Abstract

Bonded structures and methods of direct hybrid bonding are disclosed. Non-conductive regions of two elements, such as dies or wafers, are first bonded together to form a bonded structure. Aligned conductive regions of the bonded structure, such as metal pads or traces, are then annealed to expand and bridge a gap between them. The anneal includes rapid thermal processing (RTP), such as with radiant heating. The bond interface between the first and second conductive features includes rapid growth structure(s) indicative of the inclusion of RTP in the anneal. Additional non-RTP anneal phases can also be employed.


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