The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Mar. 26, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shahaji B. More, Hsinchu City, TW;
Shih-Chieh Chang, Taipei City, TW;
Cheng-Han Lee, New Taipei City, TW;
Huai-Tei Yang, Hsinchu City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Semiconductor structures and method for forming the same are provide. The method includes forming a fin structure extending in a first direction over a substrate and forming spacers on sidewalls of the fin structure to laterally sandwiched the fin structure in a second direction. The method further includes etching the fin structure in a third direction to form a recess between the spacers and forming a doped region in the fin structure exposed by the recess. The method further includes removing an upper portion of the doped region and annealing a bottom portion of the doped region after removing the upper portion of the doped region. The method further includes forming a source/drain structure over the bottom portion of the doped region.