The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Feb. 21, 2025
Applicants:

Nd-hi Technologies Lab, Inc., Taipei City, TW;

Etron Technology, Inc., Hsinchu, TW;

Inventors:

Ho-Ming Tong, Taipei City, TW;

Chao-Chun Lu, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 23/48 (2006.01); H01L 23/538 (2006.01); H01L 25/07 (2006.01); H10B 80/00 (2026.01); H10W 40/25 (2026.01); H10W 70/60 (2026.01); H10W 90/00 (2026.01); H10W 20/20 (2026.01);
U.S. Cl.
CPC ...
H10W 40/258 (2026.01); H10W 40/259 (2026.01); H10W 70/611 (2026.01); H10W 90/00 (2026.01); H10W 90/401 (2026.01); H10B 80/00 (2023.02); H10W 20/20 (2026.01);
Abstract

An IC stack includes: a plurality of integrated circuit (IC) structure horizontally separate with each other, wherein each IC structure comprises a top surface, a bottom surface opposite to the top surface, and four sidewalls with a first sidewall, a second sidewall, a third sidewall and a fourth sidewall; wherein the area of the bottom surface or the top surface is larger than that of any sidewall; a laterally extending RDL structure covering each first sidewall of the plurality of IC structures; and an upward extending thermal conductivity layer between two adjacent IC structures.


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