The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Dec. 13, 2023
Applicant:
United Microelectronics Corp., Hsin-Chu City, TW;
Inventors:
Yu-Ping Wang, Hsinchu City, TW;
Chuan-Lan Lin, Chiayi City, TW;
Chu-Fu Lin, Kaohsiung City, TW;
Teng-Chuan Hu, Tainan City, TW;
Kun-Ju Li, Tainan City, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10P 54/92 (2026.01); H10P 10/00 (2026.01); H10P 50/24 (2026.01); H10P 52/00 (2026.01); H10P 54/00 (2026.01); H10W 20/00 (2026.01); H10W 80/00 (2026.01); H10W 99/00 (2026.01); H10P 50/64 (2026.01); H10W 42/00 (2026.01); H10W 90/00 (2026.01); H10W 90/24 (2026.01);
U.S. Cl.
CPC ...
H10P 54/922 (2026.01); H10P 10/12 (2026.01); H10P 50/242 (2026.01); H10P 52/00 (2026.01); H10P 54/00 (2026.01); H10W 20/0242 (2026.01); H10W 80/00 (2026.01); H10W 99/00 (2026.01); H10P 50/24 (2026.01); H10P 50/642 (2026.01); H10W 42/121 (2026.01); H10W 90/24 (2026.01); H10W 90/792 (2026.01);
Abstract
The invention provide an edge structure of a semiconductor wafer, which comprise a first substrate, an edge region and a device region are defined on that first substrate, a first material layer covers a first surface and a side surface of the edge region, and a second material layer covers the first material layer, the cross-sectional structure of the second material layer gradually decreases from the device region to the edge region.