The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Dec. 02, 2022
Intel Corporation, Santa Clara, CA (US);
Srinivas V. Pietambaram, Chandler, AZ (US);
Claudio A. Alvarez Barros, Santiago, CL;
Beomseok Choi, Chandler, AZ (US);
Gang Duan, Chandler, AZ (US);
Jeremy D. Ecton, Gilbert, AZ (US);
Brandon Christian Marin, Gilbert, AZ (US);
Suddhasattwa Nad, Chandler, AZ (US);
Hiroki Tanaka, Gilbert, AZ (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A microelectronic structure, a semiconductor package, an IC device assembly, and a method. The structure includes a core layer including an electrically non-conductive material; electrically conductive through core vias (TCVs) through the core layer; a dielectric layer on the core layer with electrically conductive structures extending therethrough and electrically coupled to the TCVs; and a magnetic inductor (MI) within at least one of the core layer or the build-up layer and including an antiferromagnetic (AF) structure. The AF structure includes a first ferromagnetic (FM) layer; an exchange coupling (EC) layer on the first FM layer and including a non-magnetic metal material; a second FM layer on the EC layer, the EC layer between the first FM layer and the second FM layer; and a pinning (P) layer including manganese and at least one of platinum or iridium, the second FM layer between the EC layer and the P layer.