The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2026

Filed:

Aug. 07, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wei-Chen Chu, Hsinchu, TW;

Chia-Tien Wu, Hsinchu, TW;

Chuan-Pu Chou, Hsinchu, TW;

Hsin-Ping Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/00 (2026.01); H10P 76/40 (2026.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01); H10W 20/46 (2026.01);
U.S. Cl.
CPC ...
H10W 20/063 (2026.01); H10P 76/408 (2026.01); H10W 20/067 (2026.01); H10W 20/072 (2026.01); H10W 20/098 (2026.01); H10W 20/42 (2026.01); H10W 20/435 (2026.01); H10W 20/46 (2026.01);
Abstract

A method for manufacturing a semiconductor structure includes: forming a patterned first layer which is made of a first electrically conductive material, and which includes first lines, second lines, and a connection portion disposed on a part of one of the first lines, the first lines having a height lower than a height of the second lines; forming a first via which is connected to an upper surface of the connection portion, the first via having a height above the connection portion; and forming a second via which is connected to an upper surface of one of the second lines, the second via having a height that is the same as the height of the first via above the connection portion.


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