The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Jul. 14, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Sui-Ying Hsu, New Taipei City, TW;
Yueh-Ying Lee, Hsinchu City, TW;
Chien-Ying Wu, Hsinchu City, TW;
Chen-Hao Huang, Taoyuan, TW;
Chien-Chang Lee, Miaoli County, TW;
Chia-Ping Lai, Hsinchu City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A photonic device includes an optical coupler, a photodetector, a waveguide structure, a metal-dielectric stack, a contact, an interlayer dielectric layer, and a protection layer. The optical coupler, the photodetector, and the waveguide structure are over a substrate. The waveguide structure is laterally connected to the optical coupler. A top of the waveguide structure is lower than a top of the optical coupler. The metal-dielectric stack is over the optical coupler, the photodetector, and the waveguide structure. The metal-dielectric stack has a hole above the optical coupler. The contact connects the photodetector to the metal-dielectric stack. The interlayer dielectric layer is below the metal-dielectric stack and surrounds the contact. The protection layer lines the hole of the metal-dielectric stack. A bottom surface of the protection layer is lower than a top surface of the contact.