The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
May. 02, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yu-Chung Su, Hsinchu, TW;
Lilin Chang, Hsinchu, TW;
Jia-Lin Wei, Hsinchu, TW;
Ching-Yu Chang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor structure is provided. The method includes forming a photoresist layer over a substrate. The photoresist layer includes a polymer, a photoacid initiator and a crosslinker containing at least two crosslinking sites. The photoresist layer is then cured to crosslink the polymer, thereby forming a crosslinked polymer. Next, the photoresist layer is exposed to a radiation. An acid produced from exposure of the photoacid generator de-crosslinks the crosslinked polymer in exposed portions of the photoresist layer. The exposed portions of the photoresist layer are subsequently removed to form a patterned photoresist layer.