The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Oct. 31, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Ho Chiang, Hsinchu, TW;

Wei-Chen Chang, Hsinchu, TW;

Jiun-Jie Chao, Hsinchu, TW;

Jyh-Huei Chen, Hsinchu, TW;

Jye-Yen Cheng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10D 30/6729 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10D 84/017 (2025.01); H10D 84/0186 (2025.01); H10D 84/0188 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01); H10W 20/42 (2026.01); H10W 20/435 (2026.01);
Abstract

A semiconductor structure includes: a first fin portion and a second fin portion; a first device and a second device which are respectively disposed on front surfaces of the first and second fin portions, each of the first and second devices including a source/drain portion; an isolation portion disposed to separate the first fin portion from the second fin portion and to separate the first device from the second device; and a hard mask portion disposed beneath a back surface of the isolation portion, and including a main region and two sidewall regions that are respectively located at two opposite sides of the main region so as to separate the main region from the first and second fin portions. The sidewall regions are made of a material different from that of the isolation portion. The main region is made of a material different from the material of the sidewall regions.


Find Patent Forward Citations

Chiang, Yu-Ho. (2026). Semiconductor structure including bottom isolation and method for manufacturing the same (U.S. Patent No. 12733210). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12733210

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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