The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Apr. 27, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ming-Tsu Chung, Hsinchu, TW;

Yung-Chi Lin, Su-Lin City, TW;

Yen-Ming Chen, Chu-Pei City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/00 (2026.01); H10P 50/24 (2026.01); H10P 50/26 (2026.01); H10P 76/40 (2026.01);
U.S. Cl.
CPC ...
H10P 50/73 (2026.01); H10P 50/242 (2026.01); H10P 50/268 (2026.01); H10P 76/4085 (2026.01);
Abstract

A method includes forming a patterned treating mask over a first surface dielectric layer of a first package component, wherein portions of the first surface dielectric layer are exposed through the patterned treating mask, performing a selective plasma treatment on the portions of the first surface dielectric layer that are exposed through the patterned treating mask to form treated portions, removing the patterned treating mask, and bonding a second surface dielectric layer in a second package component to the first surface dielectric layer.


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