The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Nov. 24, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Shumao Zhang, San Jose, CA (US);
Qihao Zhu, Sunnyvale, CA (US);
Weifeng Ye, San Jose, CA (US);
Liqi Wu, San Jose, CA (US);
Jiang Lu, Milpitas, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods of depositing titanium silicide (TiSi) in the formation of semiconductor structures are described. The methods include thermal chemical vapor deposition (CVD) in which a semiconductor substrate in a semiconductor processing chamber is exposed to a titanium-containing precursor, a silicon-containing precursor, and hydrogen (H) to deposit the titanium silicide (TiSi) layer directly on the semiconductor substrate. Methods of selectively depositing titanium silicide (TiSi) in the formation of semiconductor structures, e.g., an n-type transistor and a p-type transistor, are also described.