The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Apr. 18, 2023
Applicant:

United Microelectronics Corp., Hsin-Chu City, TW;

Inventors:

Chuan-Lan Lin, Chiayi City, TW;

Yu-Ping Wang, Hsinchu City, TW;

Chien-Ting Lin, Tainan City, TW;

Chu-Fu Lin, Kaohsiung City, TW;

Chun-Ting Yeh, Taipei City, TW;

Chung-Hsing Kuo, Taipei City, TW;

Yi-Feng Hsu, Hsinchu City, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/131 (2023.01);
U.S. Cl.
CPC ...
H10K 59/131 (2023.02);
Abstract

A semiconductor device includes a substrate having a bonding area and a pad area, a first inter-metal dielectric (IMD) layer on the substrate, a metal interconnection in the first IMD layer, a first pad on the bonding area and connected to the metal interconnection, and a second pad on the pad area and connected to the metal interconnection. Preferably, the first pad includes a first portion connecting the metal interconnection and a second portion on the first portion, and the second pad includes a third portion connecting the metal interconnection and a fourth portion on the third portion, in which top surfaces of the second portion and the fourth portion are coplanar.


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