The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Nov. 01, 2023
Research & Business Foundation Sungkyunkwan University, Gyeonggi-Do, KR;
Iucf-hyu (Industry-university Cooperation Foundation Hanyang University), Seoul, KR;
Geun Young Yeom, Seoul, KR;
Chin Wook Chung, Seoul, KR;
Yun Jong Jang, Seoul, KR;
Doo San Kim, Suwon-si, KR;
Ye Eun Kim, Suwon-si, KR;
Hong Seong Gil, Suwon-si, KR;
Hae In Kwon, Suwon-si, KR;
Jun Young Park, Goyang-si, KR;
Ji Won Jung, Seoul, KR;
Abstract
Provided is a method for etching an atomic layer. The method for etching the atomic layer includes providing a substrate to a process chamber, wherein the process chamber comprises a first chamber part and a second chamber part, and the substrate is provided in the second chamber part, generating adsorption gas plasma in the first chamber part, adsorbing radicals of the adsorption gas plasma to the substrate so as to form a treatment layer, generating etching gas plasma in the first chamber part, and allowing electrons and ions of the etching gas plasma to be alternately incident into the treatment layer so as to perform desorption of the treatment layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile