The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Aug. 08, 2025
Applicant:

Zhejiang University, Hangzhou, CN;

Inventors:

Rong Xiang, Hangzhou, CN;

Yicheng MA, Hangzhou, CN;

Lingfeng Wang, Hangzhou, CN;

Yige Zheng, Hangzhou, CN;

Junhan Zhang, Hangzhou, CN;

Huixu Dong, Hangzhou, CN;

Assignee:

Zhejiang University, Hangzhou, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/31 (2006.01); C23C 16/52 (2006.01); G01N 21/01 (2006.01);
U.S. Cl.
CPC ...
G01N 21/3103 (2013.01); C23C 16/52 (2013.01); G01N 21/01 (2013.01); G01N 21/31 (2013.01); G01N 2201/127 (2013.01);
Abstract

An absorption spectrum-based chemical vapor deposition (CVD) online in-situ characterization system includes an absorption spectrum detection device, a spectrum movement and optical path calibration device, and a tubular CVD device. By improving the existing tubular CVD device and incorporating the environmental compensation method, the present disclosure achieves accurate detection of the CVD process under high temperature and low pressure conditions, and realizes real-time detection, so the law of changes in the sample or reaction system over time can be determined. Combined with changes in system temperature and pressure, the law of changes in the sample or reaction system with environmental changes can be further acquired, thereby determining the optimal deposition conditions. Through the optical path automatic calibration, the system can detect a deposition state of the sample at any position within the quartz tube during the deposition process, thereby quickly determining the accurate growth window of the sample.


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