The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Jan. 09, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chien-Fu Tseng, Taipei City, TW;

Yu Chieh Yung, Hsinchu, TW;

Cheng-Hsien Hsieh, Kaohsiung City, TW;

Hung-Pin Chang, New Taipei City, TW;

Li-Han Hsu, Hsinchu, TW;

Wei-Cheng Wu, Hsinchu, TW;

Der-Chyang Yeh, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 70/09 (2026.01); H10W 20/20 (2026.01); H10W 70/05 (2026.01); H10W 70/60 (2026.01); H10W 70/685 (2026.01); H10W 90/00 (2026.01); H10W 70/652 (2026.01); H10W 72/90 (2026.01); H10W 74/15 (2026.01);
U.S. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 20/20 (2026.01); H10W 70/095 (2026.01); H10W 70/611 (2026.01); H10W 70/685 (2026.01); H10W 90/401 (2026.01); H10W 70/09 (2026.01); H10W 70/6528 (2026.01); H10W 72/942 (2026.01); H10W 74/15 (2026.01); H10W 90/724 (2026.01); H10W 90/734 (2026.01);
Abstract

Manufacturing flexibility and efficiency are obtained with a method, and resulting structure, in which RDL contact features can be formed and aligned to through silicon vias (TSV's) regardless of any potential mismatch in the respective critical dimensions (CD's) between the manufacturing process for forming the TSV's and the manufacturing process for forming the contact features. Various processes for a self-aligned exposure of the underlying TSV's, without the need for additional photolithography steps are provided.


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