The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Jul. 31, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Muthukumar Kaliappan, Fremont, CA (US);

Zhebo Chen, Santa Clara, CA (US);

Michael Haverty, Mountain View, CA (US);

Yongjing Lin, San Jose, CA (US);

Shih Chung Chen, Cupertino, CA (US);

Gang Shen, San Jose, CA (US);

Alexander Jansen, Danville, CA (US);

Janardhan Devrajan, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/692 (2026.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); H10D 30/01 (2025.01); H10P 14/60 (2026.01);
U.S. Cl.
CPC ...
H10P 14/69394 (2026.01); C23C 16/34 (2013.01); C23C 16/45553 (2013.01); H10D 30/014 (2025.01); H10P 14/6339 (2026.01);
Abstract

One or more embodiments of the disclosure are directed to methods of forming structures that are useful for FEOL and BEOL processes. Embodiments of the present disclosure advantageously provide methods of depositing titanium nitride (TiN) in high aspect ratio (AR) structures with small dimensions. Some embodiments advantageously provide seam-free high-quality TiN films to fill high AR trenches with small dimensions. Embodiments of the present disclosure advantageously provide methods of filling 3D structures, such as finFETs, GAAs, and the like, without creating a seam. The methods include selective deposition processes using blocking compounds in order to provide seam-free TiN gapfill in 3D structures, such as GAA devices.


Find Patent Forward Citations

Kaliappan, Muthukumar. (2026). Titanium nitride gapfill processes for semiconductor devices (U.S. Patent No. 12721067). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12721067

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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