The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Oct. 06, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Yongjing Lin, San Jose, CA (US);
Zhihui Liu, Sunnyvale, CA (US);
Shih Chung Chen, Cupertino, CA (US);
Haoyan Sha, San Jose, CA (US);
Alexander Jansen, Danville, CA (US);
Zhebo Chen, Santa Clara, CA (US);
Janardhan Devrajan, Santa Clara, CA (US);
Tza-Jing Gung, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
One or more embodiments of the disclosure are directed to methods of forming structures that are useful for FEOL and BEOL processes. Embodiments of the present disclosure advantageously provide methods of depositing a gapfill material, such as titanium nitride (TiN), in high aspect ratio (AR) structures with small dimensions. Some embodiments advantageously provide seam-free high-quality TiN films to fill high AR trenches with small dimensions. Embodiments of the present disclosure advantageously provide methods of filling 3D structures, such as FinFETs, GAAs, and the like, with a gapfill material without creating a seam. One or more embodiments include selective deposition processes using a carbon (C) layer in order to provide seam-free TiN gapfill in 3D structures, such as GAA devices.