The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Jan. 09, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 90/00 (2026.01); H10B 80/00 (2026.01); H10P 54/00 (2026.01); H10W 40/22 (2026.01); H10W 70/65 (2026.01); H10W 72/00 (2026.01); H10W 72/30 (2026.01); H10W 72/90 (2026.01); H10W 74/01 (2026.01); H10W 74/10 (2026.01); H10W 80/00 (2026.01); H10W 90/20 (2026.01);
U.S. Cl.
CPC ...
H10W 90/00 (2026.01); H10B 80/00 (2023.02); H10P 54/00 (2026.01); H10W 40/22 (2026.01); H10W 74/014 (2026.01); H10W 74/114 (2026.01); H10W 74/121 (2026.01); H10W 70/65 (2026.01); H10W 72/0198 (2026.01); H10W 72/073 (2026.01); H10W 72/353 (2026.01); H10W 72/923 (2026.01); H10W 72/941 (2026.01); H10W 72/9415 (2026.01); H10W 72/944 (2026.01); H10W 72/951 (2026.01); H10W 72/952 (2026.01); H10W 72/953 (2026.01); H10W 80/312 (2026.01); H10W 80/327 (2026.01); H10W 80/743 (2026.01); H10W 90/297 (2026.01); H10W 90/734 (2026.01); H10W 90/736 (2026.01); H10W 90/792 (2026.01);
Abstract
A method includes bonding a first device die to a second device die through face-to-face bonding, wherein the second device die is in a device wafer, forming a gap-filling region to encircle the first device die, performing a backside-grinding process on the device wafer to reveal a through-via in the second device die, and forming a redistribution structure on the backside of the device wafer. The redistribution structure is electrically connected to the first device die through the through-via in the second device die. A supporting substrate is bonded to the first device die.