The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Mar. 15, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chia-Feng Cheng, Tainan City, TW;

Kang-Yi Lien, Tainan City, TW;

Chia-Ping Lai, Hsinchu City, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); G11C 5/06 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/495 (2006.01); H10B 51/10 (2023.01); H10B 51/20 (2023.01); H10D 1/00 (2025.01); H10D 1/68 (2025.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01); H10D 64/64 (2025.01); H10H 20/852 (2025.01); H10H 20/857 (2025.01); H10W 72/00 (2026.01); H10W 72/20 (2026.01); H10W 72/50 (2026.01); H10W 72/59 (2026.01); H10W 72/90 (2026.01);
U.S. Cl.
CPC ...
H10D 1/042 (2025.01); H10D 1/716 (2025.01); H10W 72/01235 (2026.01); H10W 72/01257 (2026.01); H10W 72/019 (2026.01); H10W 72/01935 (2026.01); H10W 72/242 (2026.01); H10W 72/252 (2026.01); H10W 72/923 (2026.01); H10W 72/934 (2026.01); H10W 72/9415 (2026.01); H10W 72/952 (2026.01); H10W 72/981 (2026.01);
Abstract

Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a metal feature in a dielectric layer, a passivation structure over the dielectric layer and the metal feature, a contact pad over the passivation structure, and a plurality of contact vias extending through the passivation structure and in contact with the metal feature and the contact pad.


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