The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Apr. 01, 2022
Applicant:

Semes Co., Ltd., Chungcheongnam-do, KR;

Inventors:

Young Je Um, Busan, KR;

Wan Jae Park, Gyeonggi-do, KR;

Joun Taek Koo, Seoul, KR;

Dong Hun Kim, Seoul, KR;

Seong Gil Lee, Gyeonggi-do, KR;

Ji Hwan Lee, Incheon, KR;

Dong Sub Oh, Busan, KR;

Myoung Sub Noh, Gyeonggi-do, KR;

Du Ri Kim, Incheon, KR;

Assignee:

SEMES CO., LTD., Chungcheongnam-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32449 (2013.01); H01J 37/32724 (2013.01); H01J 2237/3344 (2013.01);
Abstract

Provided are a substrate processing apparatus and method capable of improving line edge roughness (LER). The substrate processing apparatus comprises a plasma generating space disposed between an electrode and an ion blocker, a processing space disposed under the ion blocker and for processing a substrate, a first gas supply module for providing a first gas for generating plasma to the plasma generating space, and a second gas supply module for providing an unexcited second gas to the processing space, wherein the first gas is a hydrogen-containing gas, the second gas includes a nitrogen-containing gas, and the substrate includes a photoresist pattern including carbon.


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