The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Jul. 26, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chih-Ping Yen, Hsinchu, TW;

Yen-Shuo Su, Hsinchu City, TW;

Jui-Pin Wu, Hsinchu City, TW;

Chun-Lin Chang, Zhubei City, TW;

Han-Lung Chang, Kaohsiung City, TW;

Heng-Hsin Liu, New Taipei City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70925 (2013.01); G03F 7/70025 (2013.01); G03F 7/70033 (2013.01); G03F 7/70916 (2013.01); G03F 7/70975 (2013.01);
Abstract

An apparatus for manufacturing semiconductors includes a power amplifier to power a laser, a catalyst disposed in the power amplifier, an inlet port, and an exhaust port. The inlet port introduces a mixing gas to an interior of the power amplifier during a cleaning operation so that the mixing gas contacts a surface of the catalyst having a build-up thereon. The mixing gas reacts with and removes the build-up by generating gaseous by-products. The exhaust port removes the gaseous by-products from the power amplifier.


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