The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Jan. 24, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kun-Yen Liao, Taipei, TW;
Ming-Hsien Lin, Hsinchu County, TW;
Yung-Chih Wang, Taoyuan, TW;
Hsin-Ping Chen, Hsinchu County, TW;
Tsu-Chun Kuo, Hsinchu County, TW;
Meng-Pei Lu, Hsinchu, TW;
Cheng-Chin Lee, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A manufacturing method for a semiconductor device structure and the semiconductor device structure are disclosed. The method includes forming backside connection structures by sequentially forming heat transfer layers stacked upon one another and backside metallization structures sandwiched between the heat transfer layers. The formation of at least one heat transfer layer involves performing an annealing process to turn an insulating material layer into an insulating nanostructured material layer with nano grains and dopants distributed along grain boundaries of the nano grains.