The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Mar. 31, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Feng-Ming Chang, Hsinchu County, TW;
Jing-Yi Lin, Taipei City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Semiconductor structures and methods are provided. An exemplary method according to the present disclosure includes forming a fin-like structure over a substrate; forming an isolation feature in the substrate and adjacent to the fin-like structure substrate; forming a dummy gate structure across the fin-like structure, where the dummy gate structure comprises a first portion disposed directly over the fin-like structure and a second portion disposed directly over a portion of the isolation feature; forming a mask film to cover the first portion of the dummy gate structure while exposing the second portion of the dummy gate structure; removing the second portion of the dummy gate structure and the portion of the isolation feature thereunder to form a gate isolation trench; forming a gate isolation structure in the gate isolation trench; and replacing the first portion of the dummy gate structure with a gate stack.