The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Dec. 22, 2020
Applicant:

Versum Materials Us, Llc, Tempe, AZ (US);

Inventors:

Haripin Chandra, San Marcos, CA (US);

Xinjian Lei, Vista, CA (US);

Daniel P. Spence, Carlsbad, CA (US);

Manchao Xiao, San Diego, CA (US);

Ronald Martin Pearlstein, San Marcos, CA (US);

Matthew R. Macdonald, Mission Viejo, CA (US);

Madhukar B. Rao, Carlsbad, CA (US);

Assignee:

Versum Materials US, LLC, Tempe, AZ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/04 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C23C 16/04 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/4408 (2013.01); C23C 16/45534 (2013.01); C23C 16/45536 (2013.01); C23C 16/45553 (2013.01);
Abstract

An atomic layer deposition method for depositing a film into surface features of a substrate is disclosed. The method may include the step of placing the substrate having surface features into a reactor. An organic passivation agent may be introduced into the reactor, which may react with a portion of exposed hydroxyl radicals within the surface features. Subsequently, unreacted organic passivation agent may be purged, and then a precursor may be introduced. The precursor may react with the remaining exposed hydroxyl radicals that did not interact with the organic passivation agent. Subsequently, the unreacted precursor may be purged, and an oxygen source or a nitrogen source may be introduced into the reactor to form a film within the surface features.


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