The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Nov. 23, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Cheng-I Lin, Hsinchu, TW;
Chun-Heng Chen, Hsinchu City, TW;
Ming-Ho Lin, Taipei City, TW;
Chi-On Chui, Hsinchu City, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/02 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10P 14/60 (2026.01);
U.S. Cl.
CPC ...
H10D 84/853 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10P 14/6336 (2026.01); H10P 14/6339 (2026.01);
Abstract
A semiconductor device includes at least one fin, a first dielectric layer and a second dielectric layer. The first dielectric layer is disposed on the at least one fin. The second dielectric layer between the at least one fin and the first dielectric layer. A thickness of the first dielectric layer on a sidewall of the at least one fin is less than a thickness of the second dielectric layer on the sidewall of the at least one fin.