The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Aug. 07, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Bing Cheng You, Taichung City, TW;

Feng-Chi Hung, Chu-Bei City, TW;

Hsin-Hung Chen, Tainan City, TW;

Wen-I Hsu, Tainan City, TW;

Jen-Cheng Liu, Hsin-Chu City, TW;

Tzu-Jui Wang, Fengshan City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/771 (2023.01); H04N 25/59 (2023.01); H04N 25/79 (2023.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H04N 25/771 (2023.01); H04N 25/59 (2023.01); H04N 25/79 (2023.01); H10F 39/014 (2025.01); H10F 39/8037 (2025.01); H10F 39/811 (2025.01);
Abstract

Some embodiments relate to a device, including: a photodetector; and a pixel circuit, comprising: a floating diffusion node and an output node; a transfer transistor electrically coupled from the floating diffusion node to the photodetector; a source follower transistor comprising a gate electrode electrically coupled to the floating diffusion node; a row select transistor electrically coupled from a source/drain region of the source follower transistor to the output node; and a capacitor electrically coupled from the output node to the floating diffusion node.


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