The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2026

Filed:

Apr. 22, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chih-Yu Lai, Hsinchu, TW;

Chih-Liang Chen, Hsinchu, TW;

Chi-Yu Lu, Hsinchu, TW;

Chung-Hsing Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/43 (2026.01); H10W 20/00 (2026.01); H10W 20/20 (2026.01); H10W 20/40 (2026.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10W 20/43 (2026.01); H10W 20/023 (2026.01); H10W 20/20 (2026.01); H10W 20/213 (2026.01); H10W 20/40 (2026.01); H10W 20/42 (2026.01); H10W 20/422 (2026.01); H10W 20/435 (2026.01);
Abstract

A semiconductor device includes a substrate. The semiconductor device further includes a conductive mesh on a first side of the substrate. The semiconductor device further includes an active region on a second side of the substrate, wherein the first side of the substrate is opposite to the second side of the substrate. The semiconductor device further includes a through via electrically connected to the conductive mesh, wherein the through via extends through the substrate. The semiconductor device further includes a contact structure on the second side of the substrate, wherein the contact structure is electrically connected to the active region, the contact structure is in direct contact with the through via, and the contact structure overlaps a top surface of the through via in a top view.


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