The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
May. 21, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Meng-Sheng Chang, Chu-bei City, TW;
Chia-En Huang, Xinfeng Township, TW;
Yih Wang, Hsinchu City, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 20/20 (2023.01); H10B 20/25 (2023.01); H10W 20/49 (2026.01);
U.S. Cl.
CPC ...
H10B 20/20 (2023.02); H10B 20/25 (2023.02); H10W 20/493 (2026.01);
Abstract
A memory device is disclosed. The memory device includes a plurality of one-time programmable (OTP) memory cells. Each OTP memory cell includes a transistor disposed on a first side of a substrate, and a capacitor disposed on a second side of the substrate opposite to the first side and electrically connected to the transistor. The capacitor includes a first terminal, a second terminal formed vertically lower than the first terminal, and an insulation layer vertically interposed therebetween.