The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Dec. 01, 2022
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Min Gyu Sung, Latham, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Chanro Park, Clifton Park, NY (US);
Julien Frougier, Albany, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10W 20/20 (2026.01);
U.S. Cl.
CPC ...
H10B 12/37 (2023.02); H10B 12/315 (2023.02); H10W 20/20 (2026.01);
Abstract
A semiconductor structure having a high cell density is provided in which a frontside dynamic access memory (DRAM) is located on a frontside of a semiconductor substrate, and a backside DRAM is located on a backside of the semiconductor substrate. Peripheral transistors can be located on the frontside of the semiconductor substrate and at a same level as frontside transistors of the frontside DRAM.