The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2026

Filed:

Jun. 16, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ming-Hsin Chen, Hsinchu, TW;

Tzi-Wen Chen, Hsinchu, TW;

Chi Yang, Hsinchu, TW;

Yao-Tang Lin, Hsinchu, TW;

Jian-Yuan Su, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); H10P 76/20 (2026.01);
U.S. Cl.
CPC ...
G03F 7/70033 (2013.01); G03F 7/70358 (2013.01); G03F 7/70983 (2013.01); H10P 76/2041 (2026.01);
Abstract

A method includes: protecting a mask of a mask assembly by a frame thereon during translating the mask assembly to a position associated with a region of a substrate, the frame having height less than a focal plane associated with a selected particle size; directing extreme ultraviolet (EUV) radiation toward the mask; reflecting radiation carrying a pattern of the mask toward the mask layer; forming a feature of a semiconductor device in a layer underlying the mask layer according to the pattern.


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Chen, Ming-Hsin. (2026). Lithography system and methods (U.S. Patent No. 12687785). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12687785

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