The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Mar. 21, 2023
Applicant:

Qorvo Us, Inc., Greensboro, NC (US);

Inventors:

Yinbao Yang, Allen, TX (US);

Xiaokang Huang, Plano, TX (US);

Kenneth Frazee, Orlando, FL (US);

Assignee:

Qorvo US, Inc., Greensboro, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 72/30 (2026.01); H10W 72/00 (2026.01); H10W 72/90 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10W 72/30 (2026.01); H10W 72/073 (2026.01); H10W 72/90 (2026.01); H10W 72/07336 (2026.01); H10W 72/07355 (2026.01); H10W 72/352 (2026.01); H10W 72/3524 (2026.01); H10W 72/3528 (2026.01); H10W 72/923 (2026.01); H10W 72/952 (2026.01); H10W 90/736 (2026.01);
Abstract

The present disclosure relates to a microelectronics package with significantly reduced delamination/cracking at solder joints, and a process for making the same. The disclosed microelectronics package includes a carrier, a solder joint region over the carrier, a top intermetallic (IMC) layer over the solder joint region, and a device die over the top IMC layer. Herein, the device die includes a substrate, an active device over the substrate, a top barrier layer underneath the substrate, and a backside metal layer vertically between the top IMC layer and the top barrier layer. The backside metal layer is formed of gold (Au) with a thickness at least 0.5 μm. The top IMC layer comprises gold nickel tin (AuNiSn) or gold platinum tin (AuPtSn), and the solder joint region comprises an Au-rich gold-tin (AuSn) and gold-tin (AuSn) eutectic mixture.


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