The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Apr. 14, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Minjoon Park, Albany, NY (US);

Alec Dorfner, Albany, NY (US);

Matthew Ocana, Albany, NY (US);

Andrew Metz, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/28 (2026.01); H10P 50/00 (2026.01); H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
H10P 50/283 (2026.01); H10P 50/73 (2026.01); H10W 20/089 (2026.01);
Abstract

A method includes providing a semiconductor substrate having a first region and a second region. The method includes forming a stack of dielectric layers over the semiconductor substrate. The method includes patterning the stack to form first trenches over the first region and second trenches over the second region. The method further includes forming first conductive features having a first width in the first trenches and second conductive features having a second width in the second trenches, where the second width is less than the first width.


Find Patent Forward Citations

Park, Minjoon. (2026). Semiconductor devices and methods of manufacturing the same (U.S. Patent No. 12685055). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12685055

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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