The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Dec. 02, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/26 (2026.01); C09K 13/00 (2006.01); H01J 37/32 (2006.01); H10P 50/00 (2026.01); H10P 50/24 (2026.01); H10P 50/28 (2026.01);
U.S. Cl.
CPC ...
H10P 50/268 (2026.01); C09K 13/00 (2013.01); H01J 37/32449 (2013.01); H01J 37/32715 (2013.01); H10P 50/242 (2026.01); H10P 50/267 (2026.01); H10P 50/283 (2026.01); H10P 50/71 (2026.01); H10P 50/73 (2026.01); H01J 2237/334 (2013.01);
Abstract
A plasma processing method performed in a plasma processing apparatus having a chamber is provided. This method comprises: (a) providing a substrate to a substrate support in the chamber, the substrate having a silicon-containing film and a mask film over the silicon-containing film; (b) supplying a processing gas to the chamber, the processing gas including a tungsten-containing gas and a hydrogen fluoride gas, the flow rate of the hydrogen fluoride gas being higher than the flow rate of the tungsten-containing gas; and (c) forming a plasma from the processing gas to etch the silicon-containing film.