The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Mar. 13, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ta-Chun Lin, Hsinchu, TW;
Jhon-Jhy Liaw, Zhudong Township, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes first channel layers formed over a substrate along a first direction, and second channel layers adjacent to the first channel layers and over the substrate. The semiconductor structure includes a first gate structure formed over the first channel layers along a second direction. The semiconductor structure also includes a first gate spacer layer formed adjacent to the first gate structure, and a first thickness of the first channel layers directly below the first gate structure is smaller than a second thickness of the second channel layers directly below the first gate spacer layer