The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2026

Filed:

Jun. 10, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Hsuan-Ming Huang, Hsinchu, TW;

An Shun Teng, Hsinchu, TW;

Mingni Chang, Hsinchu City, TW;

Ming-Yih Wang, Hsin-Chu, TW;

Yinlung Lu, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/398 (2020.01); H10D 1/68 (2025.01); H10W 20/40 (2026.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
G06F 30/398 (2020.01); H10D 1/692 (2025.01); H10W 20/42 (2026.01); H10W 20/496 (2026.01);
Abstract

The present disclosure provides a method for manufacturing a semiconductor structure. The method includes receiving layout data representing information for manufacturing the semiconductor structure. A first parasitic capacitance is formed in a first region and a second parasitic capacitance is formed in a second region. The method further includes determining a parasitic capacitance difference between the first region and the second region; and forming a dummy conductor in the second region. A system for manufacturing a semiconductor device is also provided.


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