The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2026

Filed:

Dec. 12, 2022
Applicant:

Entegris, Inc., Billerica, MA (US);

Inventors:

Han Wang, Hillsboro, OR (US);

Bryan Clark Hendrix, Danbury, CT (US);

Eric Condo, Shelton, CT (US);

Assignee:

ENTEGRIS, INC., Billerica, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/50 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02208 (2013.01); C23C 16/345 (2013.01); C23C 16/4554 (2013.01); C23C 16/50 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/02315 (2013.01);
Abstract

The use of selective deposition of silicon nitride can eliminate conventional patterning steps by allowing silicon nitride to be deposited only in selected and desired areas. Using a silicon iodide precursor alternately with a thermal nitrogen source in an ALD or pulsed CVD mode, silicon nitride can be deposited preferentially on a surface such as silicon nitride, silicon dioxide, germanium oxide, SiCO, SiOF, silicon carbide, silicon oxynitride, and low k substrates, while exhibiting very little deposition on exposed surfaces such as titanium nitride, tantalum nitride, aluminum nitride, hafnium oxide, zirconium oxide, aluminum oxide, titanium oxide, tantalum oxide, niobium oxide, lanthanum oxide, yttrium oxide, magnesium oxide, calcium oxide, and strontium oxide.


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